Department of Physics | West Virginia University

Office of the Chair
P.O. Box 6315, 209 Hodges Hall
Morgantown, WV 26506-6315
PHONE: (304) 293-3422
FAX: (304) 293-5732

© 2006 West Virginia University.
Site Design: WVU Web Services
Webmaster: John Hopkins
Last Modified:

Nancy Giles
Associate Chair
Professor
B.S., University of North Carolina-Chapel Hill, 1981
Ph.D., North Carolina State University, 1987

West Virginia University
Department of Physics
P. O. Box 6315
Morgantown, WV 26506

Tel: (304) 293-3422, ext. 1444
Fax: (304) 293-5732
ngiles@wvu.edu

PERSONNEL - Current
MS Students Supervised/Thesis Titles
PhD Students Supervised/Dissertation Titles

Photoluminescence spectroscopy is an important tool in identifying point defects in semiconductor materials and device structures. This technique provides a sensitive, noncontact method to investigate the electronic structure of point defects and is used to routinely monitor the quality of crystals. In these experiments, either gas or solid-state lasers are used to produce the luminescence while the sample is maintained at temperatures ranging from 4.2 K to room temperature. High-resolution monochromators and either phototubes or semiconductor detectors are used to monitor the emitted light. My goal is to understand the origin of different recombination channels in a variety of semiconductor materials. These types of emissions include exciton, bound exciton, donor-acceptor pair, donor-hole, and electron-acceptor transitions, as well as transitions between conduction and valence bands. Excitons are formed when the electronic energy of a conduction electron is lowered due to the Coulomb interaction with a free hole. Impurities and defects in a crystal lattice can trap an exciton, thus lowering the energy further. As a result, the binding energies obtained from photoluminescence are sensitive measures of the particular trapping centers.

I also use electron paramagnetic resonance to provide a sophisticated analysis of the chemical identity and local structure of point defects in semiconductors. Other characterization tools available in my laboratory are Raman spectroscopy, photoluminescence excitation spectroscopy, absorption, and infrared PL.

Materials currently under study in my laboratory include ZnO, ZnSe, ZnTe, GaN, CdTe, (Cd,Zn)Te, (Hg,Cd)Te, KTiOPO₄, CdWO₄, and the ternary chalcopyrites CdGeAs₂, ZnGeP₂, and AgGaSe₂. The research activities are currently funded by government agencies and industry.

PUBLICATIONS:

PAPERS (REFEREED)
BOOK CHAPTER
CONFERENCE PAPERS (NON-REFEREED)

PAPERS (REFEREED)

149. “Comparative Investigation of the Performance of ZnO-Based Scintillators for Use as Alpha Particle Detectors,” J. S. Neal, L. A. Boatner, N. C. Giles, L. E. Halliburton, S. E. Dorenzo, E. D. Bourret, Nuclear Instruments and Methods in Physics Research A (published on-line, Oct. 4, 2006).

148. “Optical and electrical characterization of cadmium selenide doped with cobalt,” Ming Luo, Yongquan Jiang, Chuchuan Xu, Xiaocheng Yang, A. Burger, and N. C. Giles, Journal of Physics and Chemistry of Solids 67, pp. 2596-2602 (2006).

147. “Electron paramagnetic resonance and electron-nuclear double resonance study of Mn ²⁺ ions in CdGeAs ₂,” S. M. Evans, N. Y. Garces, R. C. DeMattei, R. S. Feigelson, N. C. Giles, and L. E. Halliburton, Physica Status Solidi B (published on-line, early view, Sept. 12, 2006).

146. “Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg _1-xCd_xTe grown by molecular beam epitaxy,” C. H. Swartz, S. Chandril, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, E. C. Piquette, C. S. Kim, I. Vurgaftman, and J. R. Meyer, Journal of Electronic Materials 35, 1360-1368 (2006).

145. “Optical and Electron Paramagnetic Resonance Spectroscopies of Diffusion-Doped Co²⁺: ZnSe ,” Ming Luo, N. Y. Garces, N. C. Giles, Utpal N. Roy, Yunlong Cui, and Arnold Burger, Journal of Applied Physics 99, article no. 073709/1-7 (2006).

144. “Effects of Free Carriers on Electron Mass and Infrared Absorption in n-type CdGeAs₂”, Chunchuan Xu, Lihua Bai, and N. C. Giles, Journal of Physics: Condensed Matter 18, pp. 2741-2747 (2006).

143. “Electron paramagnetic resonance of a donor in aluminum nitride crystals,” S. M. Evans, N. C. Giles, L. E. Halliburton, G. Slack, S. B. Schujman, and L. J. Schowalter, Applied Physics Letters 88, article no. 062112/1-3 (2006).

142. “Correlation of Electrical and Optical Properties of p-type CdGeAs₂”, Lihua Bai, Chunchuan Xu, N. C. Giles, K. Nagashio, and R. S. Feigelson, Journal of Applied Physics 99, article no. 013512/1-5 (2006).

141. “Production of native donors in ZnO by annealing at high temperature in zinc vapor”, L. E. Halliburton, N. C. Giles, N. Y. Garces, Ming Luo, Chunchuan Xu, Lihua Bai, and Lynn Boatner, Applied Physics Letters 87, article no. 172108/1-3 (2005).

140. “Energy transfer between Co ²⁺ and Fe ²⁺ ions in diffusion-doped ZnSe ,” Ming Luo, N. C. Giles, Utpal N. Roy, Yunlong Cui, and Arnold Burger, Journal of Applied Physics 98, article no. 083507/1-6 (2005).

139. “Photoluminescence of n-type CdGeAs₂”, Lihua Bai, Chunchuan Xu, K. Nagashio, Chunhui Yang, R.S. Feigelson, P. G. Schunemann, and N. C. Giles, Journal of Physics: Condensed Matter 17, pp. 5687-5696 (2005).

138. “Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn_1-xMgSe grown by molecular beam epitaxy,” B. L. VanMil, R. P. Tompkins, Ke Feng, C. H. Swartz, N. C. Giles, and T. H. Myers, Journal of Vacuum Sci. and Technology B 23, pp. 1814-1820 (2005).

137. “Thermal activation of beryllium-related photoluminescence by annealing of GaN grown by molecular beam epitaxy,” Kyoungnae Lee, B. L. VanMil, Ming Luo, Lijun Wang, N. C. Giles, and T. H. Myers, Physica Status Solidi C 2, pp. 2204-2207 (2005).

136. “Optical Properties of Cl-doped ZnSe Epilayers grown on GaAs substrates ,” B. C. Karrer, F. C. Peiris, Brenda VanMil, Ming Luo, N. C. Giles, and Thomas H. Myers, Journal of Electronic Materials 34, pp. 944-948 (2005).

135. “Shallow Donor Generation in ZnO byRemote Hydrogen Plasma,” Yuri M. Strzhemechny, Howard L. Mosbacker, Steven H. Goss, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, and Larry E. Halliburton, Shigeru Niki, and Leonard J. Brillson, Journal of Electronic Materials 34 , pp. 399-403 (2005).

134. “ Urbach Rule Used to Explain the Variation of Absorption Edge in CdGeAs₂”, Lihua Bai, Chunchuan Xu, P. G. Schunemann, K. Nagashio, R. S. Feigelson, and N. C. Giles, Journal of Physics: Condensed Matter 17, pp. 549-558 (2005).

133. “Temperature dependence of polarized absorption bands in p-type CdGeAs₂”, Lihua Bai, N. C. Giles, and P. G. Schunemann, Journal of Applied Physics 97, article no. 023105/1-6 (Jan 15, 2005).

132. “Photoluminescence of ZnTe and ZnTe:CrGrown by Molecular Beam Epitaxy,” Ming Luo, B. L. VanMil, R. P. Tompkins, T. H. Myers, and N. C. Giles, Journal of Applied Physics 97, article no. 013518/1-8 (Jan 1, 2005).

131. “Infrared Absorption from OH ^- Ions Adjacent to Lithium Acceptors in Hydrothermally Grown ZnO”, L. E. Halliburton, Lijun Wang, Lihua Bai, N. Y. Garces, N. C. Giles, M. J. Callahan, and Buguo Wang, Journal of Applied Physics 96, pp. 7168-7172 (2004).

130. “Correlation between dislocation etch pits and optical absorption in CdGeAs₂”, K. Nagashio, A. Watcharapasorn, K. T. Zawilski, R. C. DeMattei, R. S. Feigelson, L. Bai, N. C. Giles, L. E. Halliburton, and P. G. Schunemann, Journal of Crystal Growth 269, pp. 195-206 (2004).

129. “Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy", B. L. VanMil, Kyoungnae Lee, Lijun Wang, N. C. Giles, and T. H. Myers, Materials Research Society Proceedings Vol. 798, pp. 503-508 (2004).

128. “Investigation of Multiple Carrier Affects in InN Epilayers Using Variable Magnetic Field Spectroscopy,” Craig H. Swartz, Randy P. Tomkins, Nancy C. Giles, Thomas H. Myers, Hai Lu, William J. Schaff, and Lester F. Eastman, Journal of Crystal Growth 269, pp. 29-34 (2004).

127. “Luminescence Study of Donors and Acceptors in CdGeAs₂”, Lihua Bai, P. G. Schunemann, T. M. Pollak, and N. C. Giles, Optical Materials 26, pp. 501-505 (2004).

126. “Molecular Beam Epitaxy Growth of High-Quality Arsenic-Doped HgCdTe”, D. Edwall, E. Piquette, J. Ellsworth, J. Arias, C. H. Swartz, L. Bai, R. P. Tompkins, N. C. Giles, T. H. Myers, and M. Berding, Journal of Electronic Materials 33, pp. 752-756 (2004).

125. “Fundamental Materials Studies of Undoped, In-doped and As-doped HgCdTe”, C. H. Swartz, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, J. Ellsworth, E. Piquette, J. Arias, M. Berding, S. Krishnamurthy, I. Vurgaftman, and J. R. Meyer, Journal of Electronic Materials 33, pp. 728-736 (2004).

124. “Optical absorption and electron-nuclear double resonance study of Ni ⁺ions in AgGaSe₂ crystals”, K. T. Stevens, N. Y. Garces, Lihua Bai, N. C. Giles, L. E. Halliburton, S. D. Setzler, P. G. Schunemann, T. M. Pollak, R. K. Route, and R. S. Feigelson, Journal of Physics: Condensed Matter 16, pp. 2593-2607 (2004).

123. “Determination of the Nitrogen Acceptor Ionization Energy of Nitrogen Acceptors in Zinc Oxide by Photoluminescence Spectroscopy”, Lijun Wang, N. Y. Garces, L. E. Halliburton, and N. C. Giles, Materials Research Society Proceedings Vol. 799, pp. 261-266 (2004).

122. “Donor-Acceptor Pair Emission Near 0.55 eV in CdGeAs₂”, Lihua Bai, N. C. Giles, P. G. Schunemann, T. M. Pollak, K. Nagashio, and R. S. Feigelson, Journal of Applied Physics 95, pp. 4840-4844 (2004).

121. “Determination of the Ionization Energy of Nitrogen Acceptors in Zinc Oxide Using Photoluminescence Spectroscopy”, Lijun Wang and N. C. Giles, Applied Physics Letters 84, pp. 3049-3051 (2004).

120. “Remote Hydrogen Plasma Doping of Single Crystal ZnO,” Yuri M. Strzhemechny, Howard L. Mosbacker, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, and Larry E. Halliburton, Shigeru Niki, and Leonard J. Brillson, Applied Physics Letters 84 , pp. 2545-2547 (2004).

119. “Luminescence and optical absorption study of p-type CdGeAs₂”, Lihua Bai, J. A. Poston, Jr., P. G. Schunemann, K. Nagashio, R. S. Feigelson, and N. C. Giles, Journal of Physics: Condensed Matter 16, pp. 1279-1286 (2004).

118. “Electron Paramagnetic Resonance of Cr ²⁺ and Cr ⁴⁺ Ions in CdGeAs₂ Crystals”, N. Y. Garces, N. C. Giles, L. E. Halliburton, P. G. Schunemann, R. Feigelson, K. Nagashio, Journal of Applied Physics 94, pp. 7567-7570 (2003).

117. “Temperature Dependence of the Free- Exciton Transition Energy in Zinc Oxide”, Lijun Wang and N. C. Giles, Journal of Applied Physics 94, pp. 973-978 (2003).

116. “Thermal Diffusion of Lithium Acceptors into ZnO Crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, D. C. Look, and D. C. Reynolds, Journal of Electronic Materials 32, pp. 766-771 (2003).

115. “Luminescence Study of ZnTe:Cr Epilayers Grown by MBE”, Ming Luo, B. L. VanMil, R. P. Tompkins, Y. Cui, T. Mounts, U. N. Roy, A. Burger, T. H. Myers, and N. C. Giles, Journal of Electronic Materials 32, pp. 737-741 (2003).

114. “Molecular Nitrogen (N₂ ^-) Acceptors and Isolated Nitrogen (N ^-) Acceptors in ZnO Crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, G. Cantwell, and D. B. Eason, Journal of Applied Physics 94, 519-524 (2003).

113. “Infrared Absorption Bands Related to Native Defects in ZnGeP₂”, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, K. T. Stevens, P. G. Schunemann, S. D. Setzler, and T. M. Pollak, Journal of Applied Physics 93, 8975-8981 (2003).

112. “Optical and EPR Study of Defects in Cadmium Germanium Arsenide”, Lihua Bai, N. Y. Garces, Nanying Yang, P. G. Schunemann, S. D. Setzler, T. M. Pollak, L. E. Halliburton, and N. C. Giles, Materials Research Society Proceedings Vol. 744, 537-542 (2003).

111. “Luminescence and EPR Study of Lithium-Diffused ZnO Crystals”, N. Y. Garces, L. Wang, M. M. Chirila, L. E. Halliburton, and N. C. Giles, Mater. Res. Soc. Proc. Vol. 744, 87-92 (2003).

110. “Absorption, luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO₄”, N. Y. Garces, M. M. Chirila, H. J. Murphy, J. W. Foise, E. A. Thomas, C. Wicks, K. Grencewicz, L. E. Halliburton, and N. C. Giles, Journal of Physics and Chemistry of Solids 64, 1195-1200 (2003).

109. “The Path to P-Type ZnO: Donor and Acceptor Dynamics”, D. C. Look, R. L. Jones, J. R. Sizelove, N. Y. Garces, N. C. Giles, and L. E. Halliburton, Phys. Stat. Sol. (a) Applied Research 195, pp. 171-177 (2003).

108. “Heavy Cr-doping of ZnSe by Molecular Beam Epitaxy”, B. L. VanMil, A. J. Ptak, L. Bai, Lijun Wang, M. Chirila, N. C. Giles, T. H. Myers, and Larry Wang, Journal of Electronic Materials 31, pp. 770-775 (2002).

107. “Luminescence Associated with Copper in ZnGeP₂”, Lijun Wang, Lihua Bai, K. T. Stevens, N. Y. Garces, N. C. Giles, S. D. Setzler, P. G. Schunemann, and T. M. Pollak, Journal of Applied Physics 92, pp. 77-81 (2002).

106. “Raman studies on oxygen doped GaN grown by molecular beam epitaxy”, D. Papadimitrious, A. J. Ptak, D. Korakakis, N. C. Giles, and T. H. Myers, Materials Research Society Symposium Proceedings Vol. 693, pp. 41-46 (2002).

105. “Role of Copper in the Green Luminescence from ZnO Crystals”, N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Applied Physics Letters 81, 622-624 (2002).

104. “Production of Nitrogen Acceptors in ZnO by Thermal Annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, and D. C. Look, Applied Physics Letters 80, 1334-1336 (2002).

103. “Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy”, A. J. Ptak, Lijun Wang, N. C. Giles, T. H. Myers, L. T. Romano, C. Tian, R. A. Hockett, S. Mitha, and P. Van Lierde, Applied Physics Letters 79, 4524-4526 (2001).

102. “A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy”, A.J. Ptak, T.H. Myers, Lijun Wang, N.C. Giles, M. Moldovan, C.R. Da Cunha, L.A. Hornak, C. Tian, R. A. Hockett, S. Mitha and P. Van Lierde, Materials Research Society Symposium Proceedings Vol. 639 , pp. G3.3.1-G3.3.6 (2001).

101. “Controlled Oxygen Doping of GaN using Plasma Assisted Molecular-Beam Epitaxy”, A. J. Ptak, L. J. Holbert, L. Ting, C. H. Swartz, M. Moldovan, N. C. Giles, T. H. Myers, P. Van Lierde, C. Tian, R. A. Hockett, S. Mitha, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Applied Physics Letters 79, 2740-2742 (2001).

100. “The Effect of High-Energy Electrons During the Growth of ZnSe and ZnMgSe by Molecular Beam Epitaxy”, B. L. VanMil, A. J. Ptak, N. C. Giles, T. H. Myers, P. J. Treado, M. P. Nelson, J. M. Ribar, and R. D. Smith, Journal of Electronic Materials 30, 785-788 (2001).

99.     “Sharp-Line Luminescence and Absorption in ZnGeP₂”, C. I. Rablau and N. C. Giles, Journal of Applied Physics 90, 3314-3318 (2001).

98.    “Magnesium and Beryllium Doping During rf-Plasma MBE Growth of GaN”, T. H. Myers, A. J. Ptak, Lijun Wang, and N. C. Giles, Proc. of International Workshop on Nitride Semiconductors (IWN2000), Japan (published through Japanese Journal of Appl. Physics), 451-454 (2000).

97.    “Infrared Vibrational Spectra from O-H Complexes in CdWO₄”, M. M. Chirila, N. Y. Garces, H. J. Murphy, C. Wicks, K. Grencewicz, L. E. Halliburton, and N. C. Giles, J. Phys. Chem. Solids 61, 1871-1876 (2000).

96.     " Photoinduced Changes in the Charge States of Native Donors and Acceptors in ZnGeP₂”, K. T. Stevens, N. C. Giles, L. E. Halliburton, S. D. Setzler, P. G. Schunemann, and T. M. Pollak, Materials Research Society, “Infrared Applications of Semiconductors III”, Vol. 607, pp. 379-384 (2000).

95.     "Photoluminescence and EPR of Phosphorus Vacancies in ZnGeP₂”, M. Moldovan, K. T. Stevens, L. E. Halliburton, P. G. Schunemann, T. M. Pollak, S. D. Setzler, and N. C. Giles, Materials Research Society, “Infrared Applications of Semiconductors III”, Vol. 607, pp. 445-450 (2000).

94.    "Broad-Band Photoluminescence from ZnGeP₂”, M. Moldovan and N. C. Giles, Journal of Applied Physics 87, pp. 7310-7315 (2000).

93.     "Photoluminescence study of cadmium tungstate crystals", M. Chirila, K. T. Stevens, H. J. Murphy, and N. C. Giles, Journal of Physics and Chemistry of Solids 61, 675-681 (2000).

92.     "Characterization of Defect-Related Optical Absorption in ZnGeP₂", S. D. Setzler, P. G. Schunemann, T. M. Pollak, M. C. Ohmer, J. T. Goldstein, F. K. Hopkins, K. T. Stevens, L. E. Halliburton, and N. C. Giles, Journal of Applied Physics 86, pp. 6677-6681 (1999).

91.     "Microstructure, Dangling Bonds and Impurities in Activated Carbons", A. Manivannan, M. Chirila, N. C. Giles, and M. S. Seehra, Carbon 37, pp. 1741-1747 (1999).

90.     "Optical and EPR Characterization of Point Defects in Bismuth-Doped CdWO₄ Crystals", H. J. Murphy, K. T. Stevens, N. Y. Garces, M. Moldovan, N. C. Giles, and L. E. Halliburton, Radiation Effects and Defects in Solids 149, pp. 273-278 (1999).

89.     “Large Volume Imaging Arrays for Gamma-Ray Spectroscopy”, T. E. Schlesinger, B. Brunett, H. Yao, J. M. vanSycoc, R. B. James, S. U. Egarievwe, K. Chattopadhyay, X.-Y. Ma, A. Burger, N. Giles, U. El- Hanany, A. Shahar, and A. Tsigelman, J. Electronic Materials 28, 864 (1999).

88.     "Absorption and Photoluminescence Spectroscopy of Diffusion-Doped ZnSe :Cr ²⁺", C. I. Rablau, J.-O. Ndap, X. Ma, A. Burger, and N. C. Giles, J. Electronic Materials 28, 678-682 (1999).

87. “Photoluminescence Excitation Study of Nitrogen-Doped Zinc Selenide Epilayers”, M. Moldovan and N. C. Giles, J. Applied Physics 85, 6723-6727 (1999).

86.     "Electron Paramagnetic Resonance of a Cation Antisite Defect in ZnGeP₂ ", S. D. Setzler, N. C. Giles, L. E. Halliburton, P. G. Schunemann, and T. M. Pollak, Appl. Phys. Letter 74, 1218-1220 (1999).

85.     “Native Defects in the Ternary Chalcopyrites”, N. C. Giles and L. E. Halliburton, Materials Research Society Bulletin, Vol. 23, no. 7, 37-40 (1998).

84.     “Hydrogenation of undoped and nitrogen-doped CdTe and ZnSe grown by molecular beam epitaxy,” L. S. Hirsch, S. D. Setzler, A. J. Ptak, N. C. Giles, and T. H. Myers, Materials Research Society Symposium Proceedings Volume 513, 263-268 (1998).

83.     "Investigation of Donor-acceptor Pair Luminescence from ZnSe :N Epilayers", M. Moldovan, T. H. Myers, and N. C. Giles, J. Applied Physics 84, 5743-5749 (1998).

82.     "Time-Resolved Photoluminescence of ZnSe:N: Role of Fluctuations", I. Kuskovsky, D. Li, G.F. Neumark, M. Moldovan, N.C. Giles, V.N. Bondarev, and P.V. Pikhitsa, J. Crystal Growth 184-185, 525-530 (1998).

81.     "PL and EPR Spectroscopy of Point Defects in Detector Grade CdZnTe", C.I. Rablau, S.D. Setzler, L.E. Halliburton, and N.C. Giles, Mater. Res. Society Symp. Proceedings Vol. 487, 71-76 (1998).

80.    "Point Defects in CdZnTe: A Correlated Photoluminescence and EPR Study", C.I. Rablau, S.D. Setzler, L.E. Halliburton, N.C. Giles, and F. P. Doty, J. Electronic Materials 27, 813 (1998).

79.     "Nitrogen Doping of ZnSe and CdTe Epilayers: A Comparison of Two rf Sources", M. Moldovan, L.S. Hirsch, A.J. Ptak, C.D. Stinespring, T.H. Myers, and N.C. Giles, J. Electronic Materials 27, 756 (1998).

78.     "Photoluminescence of Nitrogen-Doped Zinc Selenide Epilayers", M. Moldovan, S. D. Setzler, Z. Yu, T. H. Myers, L. E. Halliburton, and N. C. Giles, J. Electronic Materials 26, 732 (1997).

77.     "Photoluminescence and Electron Paramagnetic Resonance Studies of Nitrogen-Doped ZnSe Epilayers ", M. Moldovan, S. D. Setzler, Z. Yu, T. H. Myers, L. E. Halliburton, and N. C. Giles, Mater. Res. Society Symp. Proceedings Vol. 442, 555-560 (1997).

76.     "The Effect of Hydrogen on the Molecular Beam Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions", S. L. Buczkowski, Z. Yu, M. Richards-Babb, N. C. Giles, L. T. Romano, and T. H. Myers, Mater. Res. Society Symp. Proceedings Vol. 449, 197-202 (1997).

75.     "Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy", S. D. Setzler, M. Moldovan, Zhonghai Yu, T. H. Myers, N. C. Giles, and L. E. Halliburton, Applied Physics Letters 70, 2274 (1997).

74. "Electron Paramagnetic Resonance Studies of Point Defects in Zinc Germanium Phosphide ( ZnGeP₂)," S. D. Setzler, L. E. Halliburton, N. C. Giles, P. G. Schunemann, and T. M. Pollak, Mater. Res . Soc. Symp. Proc. 450, 327-332 (1997).

73.     "Compensating Defects in Heavily Nitrogen-Doped Zinc Selenide: A Photoluminescence Study", M. Moldovan, S. D. Setzler, T. H. Myers, L. E. Halliburton, and N. C. Giles, Applied Physics Letters 70, 1724 (1997).

72.     "Band-Edge Photoluminescence at Room Temperature from ZnGeP₂ and AgGaSe₂" , M.C. Petcu, N.C. Giles, P.G. Schunemann, and T.M. Pollak, Physica Status Solidi (b) 198, 881 (1996).

71.     "The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy," Zhonghai Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, and M. R. Richards-Babb, Applied Physics Letters 69, 2731 (1996).

70.     "Photon-assisted Growth of Nitrogen-Doped CdTe and the Effects of Hydrogen Incorporation During Growth", Z. Yu, S. L. Buczkowski, M. C. Petcu, N. C. Giles, T. H. Myers, and M. Richards-Babb, J. Electronic Materials 25, 1247 (1996).

69.     "Strong Room Temperature Excitonic Resonance in CdTe:I", T. K. Tran, J. W. Tomm, N. C. Giles, B. K. Wagner, A. Parikh, and C. J. Summers, J. Crystal Growth 159, 368 (1996).

68.     "Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen", Zhonghai Yu, S. L. Buczkowski, N. C. Giles, and T. H. Myers, Applied Physics Letters 69, 82 (1996).

67.     "Photoluminescence and Micro-Raman Studies of As-Grown and High-Temperature-Annealed KTiOPO₄", K. T. Stevens, N. C. Giles, and L. E. Halliburton, Appl. Phys. Lett. 68, 897 (1996).

66.     "Hydrogenation of undoped and nitrogen-doped CdTe grown by molecular beam epitaxy", Zhonghai Yu, S. L. Buczkowski, M. C. Petcu, N. C. Giles, and T. H. Myers, Applied Physics Letters 68, 529 (1996).

65.     "Electron Paramagnetic Resonance of Ni + impurities in AgGaSe₂", L. E. Halliburton, N. C. Giles, P. G. Schunemann, and T. M. Pollak, Journal of Applied Physics 79, 556 (1996).

64.     "Donor-acceptor-pair luminescence involving the iodine A center in CdTe", Jaesun Lee, N.C. Giles, D. Rajavel, and C.J. Summers, J. Appl. Phys. 78, 5669 (1995).

63.     "Photoluminescence and Raman Studies of High Quality CdTe :I Epilayers " , N.C. Giles, Jaesun Lee, T.K. Tran, and C.J. Summers, Journal of Electronic Materials 24, 1269 (1995).

62.     "Low-Temperature Photoluminescence from Bulk CdTe and Cd_0.967Zn_0.033Te", Jaesun Lee and N.C. Giles, J. of Appl. Phys. 78, 1191 (1995).

61.     "Interpretation of near-band-edge photoreflectance spectra from CdTe", Zhonghai Yu, S. G. Hofer, N.C. Giles, T.H. Myers, and C.J. Summers, Physical Review B 51, 13789 (1995).

60.     "Selective Excitation of an Associate Donor-Acceptor Pair Complex in Iodine-doped CdTe", Jaesun Lee, N.C. Giles, and C. J. Summers, J. of Appl. Physics 77, 4544 (1995).

59.     "A Comparison of Techniques for Nondestructive Composition Measurements in CdZnTe    Substrates", S.P. Tobin, J.P. Tower, P.W. Norton, D. Chandler- Horawitz, P.M. Amirtharaj, V.C. Lopes, W.M. Duncan, A.J. Syllaios, C.K. Ard, N.C. Giles, Jaesun Lee, R. Balasubramanian, B. Bollong, T.W. Steiner, M.L.W. Thewalt, D.K. Bowen, and B.K. Tanner, J. Electronic Materials 24, 697 (1995).

58.     "Optical Properties of Undoped and Iodine Doped CdTe ", N.C. Giles, Jaesun Lee, T.H. Myers, Zhonghai Yu, R.G. Benz II, B.J. Wagner, and C.J. Summers, J. Electronic Materials 24, 691 (1995).

57.     "Photo-induced electron paramagnetic resonance of the phosphorus vacancy in ZnGeP₂", N. C. Giles, L. E. Halliburton, P. G. Schunemann, and T. M. Pollak, Applied Physics Letters 66, 1758 (1995).

56.     "Optical and Magnetic Resonance Study of Point Defects in Sr_0.6 Ba_0.4 Nb₂O₆", N.C. Giles, J. L. Wolford, G. J. Edwards, and R. Uhrin, J. Appl. Physics 77, 976 (1995).

55.     "Optical Quenching of Bound Excitons in CdTe and Cd_1-x Z0n_xTe Alloys: A Technique to Measure Copper Concentration", Jaesun Lee, T.H. Myers, N.C. Giles, B.E. Dean, and C.J. Johnson, J. Appl. Phys. 76, 537 (1994).

54.     "Above-Band-Gap Photoluminescence from n-type CdTe :I Grown by Molecular Beam Epitaxy" , Jaesun Lee , N.C. Giles, and C.J. Summers, Phys. Rev. B 49, 11459 (1994).

53.     "Room Temperature Band-Edge Photoluminescence from Cadmium Telluride", Jaesun Lee, N.C. Giles, D. Rajavel, and C.J. Summers, Phys. Rev. B 49, 1668 (1994).

52.     "Photoluminescence from Heteroepitaxial (211)B CdTe Grown on (211)B GaAs by Molecular Beam Epitaxy", Jeffrey S. Gold, T.H. Myers, N.C. Giles, K.A. Harris, L. M. Mohnkern, and R.W. Yanka, J. Appl. Phys. 74, 6866 (1993).

51.     "Photoluminescence of n-Type CdTe :I Grown by Molecular Beam Epitaxy" , N.C. Giles, Jaesun Lee, D. Rajavel, and C.J. Summers, J. Appl. Phys. 73, 4541 (1993).

50.     "Photoluminescence Spectroscopy of CdTe Grown by Photoassisted MBE", N.C. Giles, K.A. Bowers, R.L. Harper, S. Hwang, and J.F. Schetzina, J. Crystal Growth 101, 67 (1990).

49.     "Modulation Doped HgCdTe Quantum Well Structures and Superlattices Grown by Photo-assisted Molecular Beam Epitaxy", J.F. Schetzina, J.W. Han, Y. Lansari, N.C. Giles, Z. Yang, S. Hwang, J.W. Cook, Jr., and N. Otsuka, J. Crystal Growth 101, 23 (1990).

48.     "Stimulated Emission at 2.8 μm from Hg-Based Quantum Well Structures Grown by Photoassisted MBE", N.C. Giles, Z. Yang, Jeong W. Han, J.W. Cook, Jr., and J.F. Schetzina, J. Vac. Sci. TechnolA 8, 1206 (1990).

47.     " Photoassisted MBE of II-VI Semiconductor Films and Superlattices", N.C. Giles, R.L. Harper, Jr., J.W. Han, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 161, 227 (1990).

46.     "Properties of Modulation-Doped HgCdTe Superlattices", S. Hwang, Z. Yang, Y. Lansari, J.W. Han, J.W. Cook, Jr., N.C. Giles, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 161, 263 (1990).

45.     "P-type Modulation Doped HgCdTe", Jeong W. Han, S. Hwang, Y. Lansari, R.L. Harper, Z. Yang, N.C. Giles, J.W. Cook, Jr., J.F. Schetzina, and S. Sen, Appl. Phys. Lett. 54, 63 (1989).

44.     "Arsenic Doped CdTe Epilayers Grown by Photoassisted Molecular Beam Epitaxy", R.L. Harper, S. Hwang, N.C. Giles, J.F. Schetzina, D.L. Dreifus, and T. H. Myers, Appl. Phys. Lett. 54, 170 (1989).

43.     "Properties of II-VI Semiconductor Films Grown by Photoassisted Molecular Beam Epitaxy", R.L. Harper, Jr., Jeong W. Han, S. Hwang, Y. Lansari, N.C. Giles, J.W. Cook, Jr., and J.F. Schetzina, J. Vac. Sci. Technol. B 7, 244 (1989).

42.     "Excited Electronic States in Cd_1-x Mn_xTe- CdTe Superlattices", R.L. Harper, R.N. Bicknell, D.K. Blanks, N.C. Giles, J.F. Schetzina, Y.R. Lee, and A.K. Ramdas, J. Appl. Phys. 65, 624 (1989).

41.     "Modulation Doped HgCdTe", Jeong W. Han, S. Hwang, Y. Lansari, R. L. Harper, Z. Yang, N. C. Giles, J. W. Cook, Jr., and J. F. Schetzina, J. Vac. Sci. Technol. A 7, 305 (1989).

40.     "Properties of HgCdTe Films and Hg-Based Quantum Well Structures Grown by Photoassisted Molecular-Beam Epitaxy", T.H. Myers, R.W. Yanka, K.A. Harris, A.R. Reisinger, J.Han, S. Hwang, Z. Yang, N.C. Giles, J.W. Cook, Jr. J.F. Schetzina, R.W. Green, and S. McDevitt, J. Vac. Sci. Technol. A 7, 300 (1989).

39.     "Stimulated Emission at 2.8 μm from Hg-Based Quantum Well Structures Grown by Photoassisted MBE", N.C. Giles, Jeong W. Han, J.W. Cook, Jr., and J.F. Schetzina, Appl. Phys. Lett. 55, 2026 (1989).

38.     "Properties of Doped II-VI Films and Superlattices Grown by Photoassisted MBE", N.C. Giles, R.N. Bicknell, R.L. Harper, S. Hwang, K.A. Harris, and J.F. Schetzina, J. Crystal Growth 86, 348 (1988).

37.     "Properties of Substitutionally Doped CdMnTe Films and CdMnTe-CdTe Quantum Well Structures", R.L. Harper, S. Hwang, N.C. Giles, R.N. Bicknell, J.F. Schetzina, E.K.Suh, D.U. Bartholomew, Y.R. Lee, and A.K. Ramdas, J. Vac. Sci. Technol. B 6, 782 (1988).

36.     "Growth and Properties of Doped CdTe Films Grown by Photoassisted MBE", S. Hwang, R.L. Harper, K.A. Harris, N.C. Giles, R.N. Bicknell, J.F. Schetzina, D.L. Dreifus, and R.M. Kolbas, J. Vac. Sci. Technol. B 6, 777 (1988).

35.     "The Effects of a High-Temperature Anneal on the Electrical and Optical Properties of Bulk CdTe:In", N.C. Giles, S. Hwang, J.F. Schetzina, S. McDevitt, and C.J. Johnson, J. Appl. Phys. 64, 2656 (1988).

34.     "Properties of Substitutionally Doped Cd_1-x Mn_xTe Films and Cd_1-x Mn_xTe- CdTe Quantum Well Structures", R.L. Harper, S. Hwang, N.C. Giles, R.N. Bicknell, J.F. Schetzina, Y.R. Lee, and A.K. Ramdas, J. Vac. Sci. Technol. A 6, 2627 (1988).

33.     "Properties of Doped CdTe Films Grown by Photoassisted Molecular Beam Epitaxy", S. Hwang, R.L. Harper, K.A. Harris, N.C. Giles, R.N. Bicknell, J.W. Cook, Jr., and J.F. Schetzina, J. Vac. Sci. Technol. A 6, 2821 (1988).

32.     " Substitutionally Doped II-VI Semiconductor Films and Layered Structures", J.F. Schetzina, R.L. Harper, J. Han, S. Hwang, N.C. Giles, Y. Lansari, and J.W. Cook, Jr., Mater. Res. Soc. Symp. Proc. 102, 97 (1988).

31.     "Low Temperature Photoluminescence Study of Doped CdTe Films Grown by Photoassisted Molecular Beam Epitaxy", N.C. Giles, R.N. Bicknell, and J.F. Schetzina, J. Vac. Sci. Technol. A 5, 3064 (1987).

30.     "Controlled Substitutional Doping of CdTe Thin Films Grown by Photoassisted Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles, J.F. Schetzina, and C. Hitzman, J. Vac. Sci. Technol. A 5, 3059 (1987).

29.     "Controlled Substitutional Doping of CdTe Films Grown by MBE", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, J. Vac. Sci. Technol. B 5, 701 (1987).

28.     "Growth and Properties of In-Doped CdMnTe-CdTe Superlattices", R.N. Bicknell, N.C. Giles , and J.F. Schetzina, Appl. Phys. Lett. 50, 691 (1987).

27.     "Optical Properties of Doped Cd_1-x Mn_xTe", Y. Lansari, N.C. Giles, J.F. Schetzina, P. Becla, and D. Kaiser, Mater. Res. Soc. Symp. Proc. 89, 281 (1987).

26.     "Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman Technique", W.P. Allred, A.A. Khan, C.J. Johnson, N.C. Giles, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 90, 103 (1987).

25.     "Controlled Substitutional Doping of CdTe Thin Films and Cd_1-x Mn_xTe- CdTe Superlattices", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc., 90, 163 (1987).

24.     "Low Temperature Photoluminescence Study of Doped CdTe and CdMnTe Films Grown by Photoassisted Molecular Beam Epitaxy", N.C. Giles, R.N. Bicknell, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc., 90, 271 (1987).

23.     "Electrical and Optical Properties of P- and As-Doped Cd_1-x Mn_xTe", P. Becla, D. Kaiser, N.C. Giles, Y. Lansari, and J.F. Schetzina, J. Appl. Phys. 62, 1352 (1987).

22.     "The Growth and Characterization of InGaAs/GaAsP Strained Layer Superlattices", T. Katsu-yama, N.C. Giles, R.P. Burns, S.M. Bedair, and J.F. Schetzina, J. Appl. Phys. 62, 498 (1987).

21.     "Spin Flip Raman Scattering from Cd_1-x Mn_x Te :In Epilayers and Modulation Doped Cd_1-x Mn_x Te :In-CdTe Superlattices Grown by Photoassisted Molecular Beam Epitaxy", E.-K. Suh, D.U. Bartholomew, A.K. Ramdas, R.N. Bicknell, R.L. Harper, N.C. Giles, and J.F. Schetzina, Phys. Rev. B 36, 9358 (1987).

20.     "Growth and Characterization of CdTe, Mn_x Cd_1-xTe, Zn_x Cd_1-xTe, and CdSe_yTe_1-y Crystals", K.Y. Lay, N.C. Giles-Taylor, K.J. Bachmann, and J.F. Schetzina, J. Electrochem. Soc. 133, 1049 (1986).

19.     "Strain Effects in Cd_1-x Mn_xTe- CdTe Superlattices", D.K. Blanks, R.N. Bicknell, N.C. Giles-Taylor, J.F. Schetzina, A. Petrou, and J. Warnock, J. Vac. Sci. Technol. B 4, 635 (1986).

18.     "Strain Effects in Cd_1-x Mn_xTe- CdTe Superlattices", D.K. Blanks, R.N. Bicknell, N.C. Giles-Taylor, J.F. Schetzina, A. Petrou, and J. Warnock, J. Vac. Sci. Technol. A 4, 2120 (1986).

17.     "Stimulated Emission from Cd_1-x Mn_xTe and Cd_1-x Mn_xTe- Cd_1-y Mn_yTe Multiple Quantum Well Structures", R.N. Bicknell, N.C. Giles-Taylor, N.G. Anderson, W.D. Laidig, and J.F. Schetzina, J. Vac. Sci. Technol. A 4, 2126 (1986).

16.     "Growth of High Mobility N-Type CdTe by Photoassisted Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, Appl. Phys. Lett. 49, 1095 (1986).

15.     "P-Type CdTe Epilayers Grown by Photoassisted Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, Appl. Phys. Lett. 49, 1735 (1986).

14.     "Properties and Applications of CdTe/Sapphire Epilayers Grown by Molecular Beam Epitaxy", T.H. Myers, N.C. Giles-Taylor, R.W. Yanka, R.N. Bicknell, J.W. Cook, Jr., J.F. Schetzina, S.R. Jost, H.S. Cole, and H.H. Woodbury, J. Vac. Sci. Technol. A 3, 71 (1985).

13.     "Photoluminescence of CdTe: A Comparison of Bulk and Epitaxial Material", N.C. Giles-Taylor, R.N. Bicknell, D.K. Blanks, T.H. Myers, and J.F. Schetzina, J. Vac. Sci. Technol. A 3, 76 (1985).

12.     "Properties of Cd_1-x Mn_xTe- CdTe Superlattices Grown by Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, R.W. Yanka, E.L. Buckland, and J.F. Schetzina, J. Vac. Sci. Technol. B 3, 709 (1985).

11.     "Properties of Cd_1-x Mn_xTe- CdTeQuantum Well Structures and Superlattices Grown by MBE", R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, R.W. Yanka, E.L. Buckland, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 37, 35 (1985).

10.     "Stimulated Emission from a Cd_1-x Mn_xTe- CdTe Multilayer Structure", R.N. Bicknell, N.C. Giles-Taylor, N.G. Anderson, W.D. Laidig, and J.F. Schetzina, Appl. Phys. Lett. 46, 238 (1985).

9.      "Photoluminescence of a Cd_0.55 Mn_0.45Te- CdTe Multiple Quantum Well Structure in aMagnetic Field", A. Petrou, J. Warnock, R.N. Bicknell, N.C. Giles-Taylor, and J.F. Schetzina, Appl. Phys. Lett. 46, 692 (1985).

8.      "Dilute Magnetic Semiconductor ( Cd_1-x Mn_xTe) Quantum-Well Laser", R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, J.F. Schetzina, N.G. Anderson, and W.D. Laidig, Appl. Phys. Lett. 46, 1122 (1985).

7.      "Photoluminescence of Cd_1-x Mn_xTe- CdTe Multiple Quantum Wells and Superlattices in aMagnetic Field", J. Warnock, A. Petrou, R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, and J.F. Schetzina, Phys. Rev. B 32, 8116 (1985).

6.      "Growth of (100) CdTe Films of High Structural Perfection On (100) GaAs Substrates by Molecular Beam Epitaxy", R.N. Bicknell, R.W. Yanka, N.C. Giles, T.J. Magee, C. Leung, H. Kawayoshi, and J.F. Schetzina, Appl. Phys. Lett. 44, 313 (1984).

5.      "Growth of High Quality (100) CdTe Films on (100) GaAs Substrates by Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles-Taylor, R.W. Yanka, J.F. Schetzina, T.J. Magee, C. Leung, H. Kawayoshi, and G.R. Woolhouse, J. Vac. Sci. Technol. B 2, 417 (1984).

4.      " Cd_1-x Mn_xTe- CdTe Multilayers Grown by Molecular Beam Epitaxy", R.N. Bicknell, R.W. Yanka, N.C. Giles-Taylor, D.K. Blanks, E.L. Buckland, and J.F. Schetzina, Appl. Phys. Lett. 45, 92 (1984).

3.      "Study of the Electronic Structure of Amorphous Silicon Using Reverse-Recovery Techniques", M. Silver, N.C. Giles, E. Snow, M.P. Shaw, V. Cannella, and D. Adler, Appl. Phys. Lett. 41, 935 (1982).

2.      "What is the Majority Carrier Drift Mobility in a- Si Alloys? " , M. Silver, N.C. Giles, and E. Snow, Sol. Energy Mater. 8, 303 (1982).

1.      "Screening of Charge Transfers at Transition-Metal- Adsorbate Interfaces", N.C. Giles and C.M. Varma, Phys. Rev. B 23, 5600 (1981).

Go to the top of the page.

BOOK CHAPTER

" HgTe-CdTe Superlattices", J.R. Meyer, C.A. Hoffman, T.H. Myers, and N.C. Giles,

Chapter 7 in Handbook of Semiconductors: Materials, Properties, and Preparation, Volume 3a, edited by S. Mahajan (North Holland, Amsterdam, 1994), pp. 535 - 593.

Go to the top of the page.

CONFERENCE PAPERS (NON-REFEREED)

16. “ Optical absorption issues in CdGeAs₂ single crystals,” K. Nagashio, Lihua Bai, R. DeMattei, N. C. Giles, and R. S. Feigelson, in Proceedings of SPIE-The International Society for Optical Engineering , Vol. 5912, pp. 129-137 (2005).

15. “Photoluminescence and EPR of donors and acceptors in ZnO,” N. C. Giles, N. Y. Garces, Lijun Wang, and L. E. Halliburton, in SPIE Conference on Quantum Sensing and Nanophotonic Devices, Proceedings Vol. 5359, pp. 267-278 (2004).

14. “Effect of donors and acceptors on the optical properties of cadmium germanium arsenide (CdGeAs₂),” Lihua Bai, N. Y. Garces, Chunchuan Xu, L. E. Halliburton, N. C. Giles, P. G. Schunemann, K. Nagashio, Chunhui Yang, and R. S. Feigelson, in SPIE Conference on Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III, Proceedings Vol. 5337, pp. 22-29 (2004).

13. “Assignment of infrared absorption bands in ZnGeP₂,” N. C. Giles, Lihua Bai, N. Y. Garces, P. G. Schunemann, and T. M. Pollak, in SPIE Conference on Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III, Proceedings Vol. 5337, pp. 11-21 (2004).

12. “Electron Paramagnetic Resonance Investigation of Donor Impurities in CdZnTe Grown by Different Techniques”, N. C. Giles, C. I. Rablau, N. Y. Garces, K. Chattopadhyay, A. Burger, E. Cross, F. P. Doty, and R. B. James, in SPIE Conference on Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, Proceedings Vol. 3768, pp. 472-480 (1999).

11. "Photorefractive Properties of Iron-Doped Congruent Lithium Niobate, and Iron-Doped K₂O Flux Grown Stoichiometric Lithium Niobate", Mark H. Garrett, Irina Mnushkina, T. Furukawa, K. Kitamura, L. E. Halliburton, N. C. Giles, and S. D. Setzler, Proceedings of the 1997 Topical Meeting on Photorefractive Materials, Effects and Devices, Waseda Symposium (co-sponsored by Optical Society of America), pp. 295-298.

10. "Crystal growth and spectroscopy of rare-earth orthophosphates as potential diode-pumped laser sources", R. Uhrin, S. Setzler, N. C. Giles, and L. E. Halliburton, SPIE Symposium on Solid State Lasers for Inertial Confinement of Fusion, Proceedings Vol. 2633, p.724-731 (1996).

9. "Optical and Electrical Properties of Iodine Doped HgCdTe Alloys and Superlattices Grown by Metalorganic Molecular Beam Epitaxy", C.J. Summers, A. Parikh, T. K. Tran, J. W. Tomm, N. C. Giles, S. D. Pearson, R. G. Benz II, B. K. Wagner, and R. N. Bicknell- Tassius, SPIE Symposium on Growth and Characterization of Materials for Infrared Detectors II, Proceedings Vol. 2554, p. 109-122 (1995).

8. "Optical and Magnetic Resonance Characterization of Donors and Acceptors in ZnGeP

₂", N. C. Giles, L. E. Halliburton, and P. G. Schunemann, SPIE Photonics West '95, Solid State Lasers and Nonlinear Crystals, Proceedings Vol. 2379, p. 175-184 (1995).

7. "Principal Strain Tensor Elements for ( h,h,k)-Oriented Cubic Crystals: An Application to ZnSe-based Heterostructures", T.D. Fang, D.N. Talwar, and N.C. Giles, Proc. of the 1994 SPIE Int. Symposium on OE/Aerospace Sensing, Producibility of II-VI Materials and Devices, Vol. 2228, p. 165-176 (1994).

6. " Photoassisted doping of II-VI wide band gap semiconductor films", J. F. Schetzina, N. C. Giles, S. Hwang, and R. L. Harper, Tr. J. of Physics 14, 55 (1990). ( or Doga Truk Fiz. Astrofiz . Derg . ( Turkey ) 14, 55 (1990).) Proc. of International Conference on Beam-Solid Interactions.

5. "Modulation-doped HgCdTe", J.F. Schetzina, J.W. Han, S. Hwang, Y. Lansari, R.L. Harper, Z. Yang, N.C. Giles, and J.W. Cook, Jr., Tr. J. of Physics 14, 65 (1990). ( or Doga Truk Fiz. Astro-fiz . Derg . ( Turkey ) 14, 65 (1990).) Proc. of International Conference on Beam-Solid Interactions.

4. "Growth of II-VI semimagnetic semiconductors by molecular beam epitaxy", R.N. Bicknell- Tassius, N.C. Giles, and J.F. Schetzina, in Growth and Optical Properties of Wide-Gap II-VI Low Dimensional Semiconductors, eds. T.C. McGill, C.M. Sotomayor-Torres, and W. Gebhardt, no. 200 in NATO ASI ( Plenium Press, New York, 1989), p. 263.

3. " Photoassisted MBE: A New Approach to Substitutional Doping", J.F. Schetzina, R.N. Bicknell, N.C. Giles, and R.L. Harper, Proc. of the 1987 SPIE Conf. on the Growth of Compound Semiconductors, Baypoint, FL (1987).

2. "Stimulated Emission from Cd_1-x Mn_xTe- CdTe and Cd_1-x Mn_xTe- Cd_1-y Mn_yTe Multiple Quantum Well Structures", R.N. Bicknell, N.C. Giles-Taylor, J.F. Schetzina, N.G. Anderson, and W.D. Laidig, Proc. of the 1986 Seoul Int. Symp. on the Physics of Semiconductors and Its Applications, Seoul National University, Seoul, Korea, pp. 149 (1986).

1. "Strain Effects in Cd_1-x Mn_xTe- CdTe Superlattices", D.K. Blanks, R.N. Bicknell, N.C. Giles-Taylor, J.F. Schetzina, A. Petrou, and J. Warnock, Proc. of the 1986 Seoul Int. Symp. on the Physics of Semiconductors and Its Applications, Seoul National Univ., Seoul, Korea, pp. 145 (1986).

Go to the top of the page.